GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology
GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology
复制标题
DOI：
10.1109/tthz.2016.2618751
复制
发表时间：
2017
影响因子：
3.2
通讯作者：
A. Eblabla;Xu Li;D. Wallis;I. Guiney;K. Elgaid
中科院分区：
文献类型：
--
作者：
A. Eblabla;Xu Li;D. Wallis;I. Guiney;K. Elgaid
本文首次在H波段（220-325 GHz）的低电阻率硅衬底（ρ <40 Ω·cm）上的GaN上展示了可行的传输介质技术。屏蔽-升高共面波导（CPW）线路采用标准单片微波集成电路兼容空气桥工艺，将CPW走线升高到屏蔽金属化接地板上的5 μm苯并环丁烯层之上。小于2.3 dB/mm的插入损耗实现了高达325 GHz，相比之下，27 dB/mm的CPW直接制造在衬底上。为了证明该技术的效率，使用了谐振频率为244 GHz的短路短截线滤波器。该滤波器实现了空载Q值为28，沿着，插入损耗为0.35 dB，回波损耗为-34 dB。据我们所知，这些结果是迄今为止GaN基技术的最佳报道。
In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ <; 40 Ω·cm) at H-band frequencies (220-325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on shielded metalized ground plates. An insertion loss of less than 2.3 dB/mm was achieved up to 325 GHz, compared with 27 dB/mm for CPW fabricated directly on the substrate. To prove the efficiency of the technology, a short-circuited stub filter with a resonant frequency of 244 GHz was used. The filter achieved an unloaded Q-factor of 28, along with an insertion loss of 0.35 dB and a return loss of - 34 dB. To our knowledge, these results are the best reported to date for GaN-based technology.