Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide
Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide
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DOI：
10.1103/physrevlett.99.226401
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发表时间：
2007-11-30
影响因子：
8.6
通讯作者：
Averitt, R. D.
中科院分区：
文献类型：
--
作者：
Hilton, D. J.;Prasankumar, R. P.;Averitt, R. D.
We use optical-pump terahertz-probe spectroscopy to investigate the near-threshold behavior of the photoinduced insulator-to-metal (IM) transition in vanadium dioxide thin films. Upon approaching T-c a reduction in the fluence required to drive the IM transition is observed, consistent with a softening of the insulating state due to an increasing metallic volume fraction (below the percolation limit). This phase coexistence facilitates the growth of a homogeneous metallic conducting phase following superheating via photoexcitation. A simple dynamic model using Bruggeman effective medium theory describes the observed initial condition sensitivity.
