Crystal growth and scintillation properties of Nd doped CaF2 single crystal
Crystal growth and scintillation properties of Nd doped CaF2 single crystal
复制标题
Nd掺杂CaF2单晶的晶体生长和闪烁特性
DOI：
10.1109/nssmic.2009.5402285
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
Y. Kawazoe
中科院分区：
文献类型：
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作者：
Hidehiko Tanaka;Y. Furuya;N. Kawaguchi;Naoto Abe;Y. Yokota;T. Yanagida;M. Nikl;K. Kamada;A. Yoshikawa;Y. Kawazoe
研究了掺钕CaF_2单晶闪烁体。我们尝试用简单的熔体凝固法生长掺钕1、5、10、20、30和40%的CaF_2单晶。比较了这些样品的X射线激发的射电发光光谱、透射率、α射线辐射衰减时间和光产额。当它们被X射线辐照时，在真空紫外区出现发光。在大于约180 nm的波长处，它们的透过率超过70%。在衰减时间动力学中，掺钕CaF_2的快成分分布在8-40 nsec之间，且随掺钕浓度的增加而变短。它们与Nd 3 + 5d-4f真空紫外发射有关。掺钕CaF_2的光产额分布在5-2500光子/5.5MeV α之间，随掺钕量的增加而减小。
Nd3+ doped CaF2 single crystal scintillator has been investigated. We tried to grow 1, 5, 10, 20, 30 and 40% Nd doped CaF2 single crystals by the simple melt-solidifying method. Those sampeles are compared in terms of their X-ray excited radio luminescence spectra, transmittance, α-ray radiated decay time and light yield. When they are irradiated by X-ray the luminescence appears at VUV region. Transmittances of them are more than 70% at wavelengths longer than about 180 nm. In decay time kinetics, the fast components of Nd doped CaF2 are distributed in 8-40 nsec and became shorter with increasing of concentration of Nd. they are related to the Nd3+ 5d-4f VUV emission. The light yield of Nd doped CaF2 are distributed in 5-2500 photon/5.5MeV α and decrease with the increasing of the amount of Nd concentrations.