Random successive growth model for pattern formation.
Random successive growth model for pattern formation.
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用于形成图案的随机连续增长模型。
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Boquan
中科院分区：
文献类型：
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作者：
Ziqin;Boquan
为了解释金属半导体薄膜在晶化和菌落生长过程中形成的模式，提出了一个不需要远程扩散的随机连续生长模型。在该模型中，增长由两个局部条件控制：集群周围相邻站点的增长概率和以潜在增长站点为中心的小圆圈内集群站点的占有率。改变这些条件，得到了分形、密集分枝和致密的生长模式。
In order to explain patterns formed during crystallization of metal-semiconductor films and during bacterial colony growth, a random successive growth model where no long-range diffusion is necessary has been proposed. In this model the growth is controlled by two local conditions: growth probability of the neighboring sites around the cluster and occupation ratio of the sites of the cluster inside a small circle with the potential growth site as its center. Varying these conditions, fractal, dense-branching, and compact growth patterns have been obtained.