Band bending at the P3HT/ITO interface studied by photoelectron spectroscopy
Band bending at the P3HT/ITO interface studied by photoelectron spectroscopy
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DOI：
10.1016/j.orgel.2014.03.012
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发表时间：
2014-07
影响因子：
3.2
通讯作者：
Martine Schneider;A. Wagenpfahl;C. Deibel;V. Dyakonov;A. Schöll;F. Reinert
中科院分区：
文献类型：
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作者：
Martine Schneider;A. Wagenpfahl;C. Deibel;V. Dyakonov;A. Schöll;F. Reinert
利用光电子能谱（PES）研究了聚（3-己基噻吩）(P3HT)/氧化铟锡界面的电子结构。在厚度相关的磁芯和价态PES数据中，我们观察到在距离界面40 nm的范围内存在显著的（0.8±0.1）eV的能带弯曲。极化态的厚度依赖遵循指数定律，从而表明由于陷阱态的肖特基-莫特行为。通过漂移-扩散模拟，我们可以确定p型掺杂浓度C= 5-4+ 5·10 15 cm-3和消失注入势垒高斯态密度宽度σ= 155 meV。
The electronic structure of poly (3-hexylthiophene)(P3HT)/indium tin oxide interfaces was studied by photoelectron spectroscopy (PES). In the thickness dependent core and valence PES data we observe a significant band bending of about (0.8±0.1) eV within 40 nm distance of the interface. The thickness dependence of the polaronic state follows an exponential law, thus indicating a Schottky–Mott-like behaviour due to trap states. From a drift-diffusion simulation we can determine a p-type doping concentration of C= 5-4+ 5· 10 15 cm-3 and a width of the Gaussian density of states of σ= 155 meV for a vanishing injection barrier.