CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects
CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects
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DOI：
10.1038/nphoton.2009.259
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发表时间：
2010-01-10
期刊：
影响因子：
35
通讯作者：
Lipson, Michal
中科院分区：
文献类型：
--
作者：
Levy, Jacob S.;Gondarenko, Alexander;Lipson, Michal
硅光子学使片上超高带宽光网络的制造成为可能，这对微电子的未来至关重要（1-3）。实现波分复用网络所需的几个光学元件已经在硅中得到证明。然而，能够驱动这种网络的完全集成的多波长源尚未实现。光放大是激光发射的必要组成部分，已经通过受激拉曼散射（4，5）、参数混合（6）和硅纳米晶体（7）或纳米图案化硅（8）在芯片上实现。在大多数这些结构中的损耗阻止了振荡。拉曼振荡器已经被证明（9-11），但是具有不足以用于波分复用的窄增益带宽。在这里，我们展示了第一个单片集成CMOS兼容的源，通过创建一个光学参量振荡器形成的硅上的氮化硅环形谐振器。该器件可以产生100多个新的波长，工作功率低于50 mW。该源可以在微电子芯片上形成高带宽光网络的骨干。
Silicon photonics enables the fabrication of on-chip, ultrahigh-bandwidth optical networks that are critical for the future of microelectronics(1-3). Several optical components necessary for implementing a wavelength division multiplexing network have been demonstrated in silicon. However, a fully integrated multiple-wavelength source capable of driving such a network has not yet been realized. Optical amplification, a necessary component for lasing, has been achieved on-chip through stimulated Raman scattering(4,5), parametric mixing(6) and by silicon nanocrystals(7) or nanopatterned silicon(8). Losses in most of these structures have prevented oscillation. Raman oscillators have been demonstrated(9-11), but with a narrow gain bandwidth that is insufficient for wavelength division multiplexing. Here, we demonstrate the first monolithically integrated CMOS-compatible source by creating an optical parametric oscillator formed by a silicon nitride ring resonator on silicon. The device can generate more than 100 new wavelengths with operating powers below 50 mW. This source can form the backbone of a high-bandwidth optical network on a microelectronic chip.