Simulation of Kinetically Limited Nucleation and Growth at Monatomic Step Edges
Simulation of Kinetically Limited Nucleation and Growth at Monatomic Step Edges
复制标题
单原子阶梯边缘动力学限制成核和生长的模拟
DOI:
10.1149/1.2746569
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发表时间:
2007
期刊:
影响因子:
--
通讯作者:
R. Alkire
中科院分区:
文献类型:
--
作者:
R. Stephens;R. Alkire
A kinetic Monte Carlo (KMC) numerical approach was used to investigate initial stages of kinetically controlled nucleation and growth on electrodes. Deposition, surface diffusion, nucleation, and growth were simulated for a pristine system consisting of metal ions in solution adjacent to a face-centered-cubic (fee) surface that is initially configured with a series of parallel, monatomic step edges. Simulations were carried out with an atomic-scale, solid-on-solid KMC algorithm, in which the deposited atoms occupied the sites of a fee lattice. One series of simulations was carried out for metal deposition onto a substrate of the same metal. The results were characterized according to a dimensionless quantity, A, that represented the ratio of the rate of surface diffusion to the rate of deposition. It was found for large values of A that the deposit grew at the monatomic step edges, whereas for small values of A the step edges played no role in the nucleation of islands. A second series of simulations was carried out for deposition onto a foreign substrate. The growth modes associated with various combinations of system parameters was explored.