Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+ Ions Implanted into Si
Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+ Ions Implanted into Si
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注入 Si 的 2.0 MeV Au 离子的预计射程、射程分散和横向扩散
DOI：
10.1143/jjap.41.918
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
M. Nagaki
中科院分区：
文献类型：
--
作者：
Ke;Feng Chen;Huiying Hu;Jiang;Xiangdong Liu;D. Shen;T. Narusawa;M. Nagaki
2.0在室温下，以2×1015 ions/cm ~ 2的注量，采用不同的入射角，将MeV的Au+离子注入到不同的Si衬底中。测试的硅衬底是非晶硅、非晶硅膜和晶体硅。利用卢瑟福背散射（RBS）研究了平均投影距离、距离离散和横向扩展。结果表明：（1）实验平均投影射程比TRIM（离子在物质中的输运）预测值大20%左右;（2）实验射程离散和横向扩展与TRIM预测值有较大偏差;（3）考虑核与电子阻止的关联后，实验值与计算值的一致性明显提高。
2.0 MeV Au+ ions were implanted into different Si substrates with a fluence of 2×1015 ions/cm2 at room temperature with different angles of incidence. Tested Si substrates are amorphized Si, amorphous Si film and crystal Si. The mean projected range, range straggling and lateral spread have been studied by Rutherford backscattering (RBS). The results show that (1) the experimental mean projected range is larger than the value predicted by TRIM (transport of ions in matter) by around 20%; (2) the experimental range straggling and lateral spread deviate significantly from the TRIM predictions; (3) after the correlation between nuclear and electronic stopping is included, the agreement between experimental and calculated values is markedly improved.