Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films
Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films
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DOI：
10.1557/jmr.1999.0468
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发表时间：
1999-08-01
影响因子：
2.7
通讯作者：
Clemens, BM
中科院分区：
文献类型：
--
作者：
Nix, WD;Clemens, BM
我们研究了应力与微晶聚结在生长的初始阶段，在薄的多晶薄膜与岛屿，生长形态。当生长的微晶在它们的底部彼此接触时，侧壁压缩在一起，直到与消除表面积相关的能量之间达到平衡，产生晶界和使膜应变。我们的估计所产生的应变只依赖于界面自由能，弹性性能，和晶粒尺寸和预测大的拉伸应力与实验结果一致。我们还讨论了可能的应力松弛机制，可以发生在膜生长后的聚结事件。
We examined the stress associated with crystallite coalescence during the initial stages of growth in thin polycrystalline films with island,growth morphology. As growing crystallites contacted each other at their bases, the side-walls zipped together until a balance was reached between the energy associated with eliminating surface area, creating a grain boundary and straining the film. Our estimate for the resulting strain depends only on interfacial free energies, elastic properties, and grain size and predicts large tensile stresses in agreement with experimental results. We also discuss possible stress relaxation mechanisms that can occur during film growth subsequent to the coalescence event.