Silicon immersion gratings for very high-resolution infrared spectroscopy
Silicon immersion gratings for very high-resolution infrared spectroscopy
复制标题
用于极高分辨率红外光谱的硅浸没光栅
DOI：
10.1117/12.552028
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
Junfeng Wang
中科院分区：
文献类型：
--
作者：
D. McDavitt;J. Ge;S. Miller;Junfeng Wang
在我们的团队中，开发直径高达4英寸的大尺寸硅浸没光栅是一种常规做法。第一个硅变形浸没光栅在30 mm厚的硅衬底上具有80 × 50 mm 2的蚀刻光栅面积、63.5°的闪耀角和5.4 l/mm的沟槽密度（或185 μm周期）。凹槽密度比任何现有的商业中阶梯光栅粗约4倍，允许在K波段中R = 220，000的1 k x 1 k IR阵列上完全覆盖交叉分散的中阶梯光谱。光学测量表明，该光栅具有高质量的波前和表面。均方根波前误差为0.125波，积分散射光在0.6328 nm处约为1%。硅浸没式光栅的刻蚀面积为85 × 50 mm 2，闪耀角为54.7°，沟槽密度为16.1 l/mm，厚度为40 mm，在2kx 2k红外阵列上可实现1.2-2.4 μm的全波长覆盖。我们正在加工一个直径为6英寸、厚度为2.5英寸的硅盘，以制作一个用于双子座下一代高级低温阶梯光谱仪（ACES）和空间应用的大幅面硅浸没光栅。
In our group, development of large format silicon immersion gratings with sizes up to 4 inches in diameter is a routine practice. The first silicon anamorphic immersion grating has an 80x50 mm2 etched grating area, a 63.5° blazed angle and a 5.4 l/mm groove density (or 185 μm period) on a 30mm thick silicon substrate. The groove density is about 4 times coarser than any existing commercial echelle grating, allowing a complete coverage of a cross-dispersed echelle spectrum on a 1k x 1k IR array at R = 220,000 in the K band. The optical measurements show the grating has a high quality wavefront and surface. The rms wavefront error is 0.125 waves and the integrated scattered light is ~1% at 0.6328 nm. A silicon immersion grating with an 85x50 mm2 etched area, a 54.7° blazed angle and 16.1 l/mm groove density on a 40 mm thickness allows for complete wavelength coverage of 1.2-2.4 μm on a 2kx2k IR array. We are in the middle of processing a silicon disk with a 6 inch diameter and 2.5 inch thickness to make a large format silicon immersion grating for the Gemini next generation Advanced Cryogenic Echelle Spectrograph (ACES) and space applications.