Localized emission from laser-irradiated defects in 2D hexagonal boron nitride
Localized emission from laser-irradiated defects in 2D hexagonal boron nitride
复制标题
DOI：
10.1088/2053-1583/aa8e61
复制
发表时间：
2018-01-01
期刊：
影响因子：
5.5
通讯作者：
Teo, Edwin Hang Tong
中科院分区：
文献类型：
--
作者：
Hou, Songyan;Birowosuto, Muhammad Danang;Teo, Edwin Hang Tong
六方氮化硼(HBN)是一种很有前途的二维光电子器件材料，具有很大的禁带宽度和在纳米电子电路中的灵活性。在这里，我们报告了利用激光照射可以在hBN单层和薄片中设计出明亮的和局域的发光中心。激光辐照的hBN大单分子膜中出现了hBN向CBN的转变，而加工的hBN薄片中则没有。值得注意的是，hBN薄片中的色心显示出更清洁的室温单光子发射，g(2)(0)在0.20~0.42之间，线宽为1.4 nm，与单分子膜相比亮度更高。我们的研究结果为激光诱导hBN中确定性缺陷的工程化铺平了道路，并为hBN作为纳米光源在光子学中的应用提供了广阔的前景。
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for photonics device due to its large bandgap and flexibility in nanophotonic circuits. Here, we report bright and localized luminescent centres can be engineered in hBN monolayers and flakes using laser irradiation. The transition from hBN to cBN emerges in laser irradiated hBN large monolayers while is absent in processed hBN flakes. Remarkably, the colour centres in hBN flakes exhibit room temperature cleaner single photon emissions with g(2)(0) ranging from 0.20 to 0.42, a narrower line width of 1.4 nm and higher brightness compared with monolayers. Our results pave the way to engineering deterministic defects in hBN induced by laser pulse and show great prospect for application of defects in hBN used as nano-size light source in photonics.