Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering
Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering
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采用 ECR 等离子体溅射形成的 HfN 栅极电介质的 MISFET 的潜力
DOI：
10.1049/el.2013.0319
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发表时间：
2013
影响因子：
1.1
通讯作者：
S. Ohmi
中科院分区：
文献类型：
--
作者：
H. S. Han;D. Han;S. Ohmi
报道了一种具有优异电学性能的Al/HfN/p-Si（100）n-MISFET，该器件采用电子回旋共振等离子体溅射法制备了等效氧化层厚度为0.7nm的4 nm厚HfN栅介质。该器件的阈值电压（Vth）为0.05V。在W/L = 90 =m/5 =m时的开/关比和亚阈值摆幅分别为= 103和200 mV/dec。分别特别地，n-MISFET表现出I DS，sat = 20.2 =A/=m和gm = 20.5 mS/mm。这是具有HfN栅极介质的n-MISFET特性的首次报道。
A report is presented on a Al/HfN/p-Si(100) n-MISFET with excellent electrical properties that inserts a 4 nm-thick HfN gate dielectric with equivalent oxide thickness of 0.7 nm formed by electron-cyclotron-resonance plasma sputtering. The threshold voltage (V th ) of the device was 0.05 V. The on/off ratio and subthreshold swing at W/L = 90 =m/5 =m were =10 3 and 200 mV/dec., respectively. In particular, the n-MISFET exhibits I DS,sat = 20.2 =A/=m and g m = 20.5 mS/mm. This is the first report of n-MISFET characteristics with HfN gate dielectric.