Modal Gain at Excited States in High-Density InGaAs Quantum Dots Investigated by Variable Stripe Length Method

Modal Gain at Excited States in High-Density InGaAs Quantum Dots Investigated by Variable Stripe Length Method
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可变条带长度法研究高密度 InGaAs 量子点激发态模态增益

DOI:
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发表时间:
2018
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影响因子:
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通讯作者:
and A. Murayama
and A. Murayama
中科院分区:
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文献类型:
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作者:
A. Ohtake;S. Hiura;A. Washida;J. Takayama;and A. Murayama

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