Vapour phase epitaxy of Cu2O on a-plane Al2O3
Vapour phase epitaxy of Cu2O on a-plane Al2O3
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DOI：
10.1002/pssc.201200951
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发表时间：
2013-10
期刊：
影响因子：
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通讯作者：
A. Wagner;Harald Scherg-Kurmes;A. Waag;A. Bakin
中科院分区：
文献类型：
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作者：
A. Wagner;Harald Scherg-Kurmes;A. Waag;A. Bakin
我们提出了一种基于气相的方法，利用单质铜和氧作为前驱体材料进行Cu2O的外延生长。目前MOCVD方法的实施受到缺乏在合理温度下具有足够高蒸气压的Cu化学源的阻碍。此外，与基于化学蒸汽的生长方法相比，使用元素前驱体在生长过程中具有较少杂质掺入的优点。讨论了工艺参数对生长的影响。高分辨率x射线衍射测量显示主要生长两个（002）和（220）Cu2O取向。生长参数的精确控制提供了纯Cu2O相的可重复生长，而没有额外的CuO形成。在730°C ~ 870°C的温度范围内，Cu2O在a面Al2O3表面外延生长。（©2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
We present a vapour phase based approach for the epitaxial growth of Cu2O with the utilization of elemental copper and oxygen as precursor materials. At present the implementation of MOCVD approach is hampered by the absence of the chemical source of Cu with high enough vapour pressure at reasonable temperatures. Moreover, the use of elemental precursors has the advantage of less impurity incorporation during growth opposed to chemical vapour based growth methods. The influence of process parameters on the growth is discussed. High resolution X-ray diffraction measurements reveal the growth of mainly the two (002) and (220) Cu2O orientations. Precise control of the growth parameters provides the reproducible growth of pure Cu2O phase without additional CuO formation. Epitaxial growth of Cu2O is demonstrated on a-plane Al2O3 in the temperature range of 730 °C–870 °C. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)