Dyakonov–Shur plasma excitations in the channel of a real high-electron mobility transistor
Dyakonov–Shur plasma excitations in the channel of a real high-electron mobility transistor
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真实高电子迁移率晶体管沟道中的 Dyakonov-Shur 等离子体激发
DOI：
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发表时间：
2000
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影响因子：
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通讯作者：
F. Crowne
中科院分区：
文献类型：
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作者：
F. Crowne
导致Dyakonov和Shur给出的漂移2D电子气中的等离子体激发的不稳定性的预测的论点通过处理在其欧姆区域中偏置的真实的高电子迁移率晶体管（HEMT）沟道（即，低于夹断），包括沟道电荷密度的不均匀性。表达式推导出的Dyakonov-Shur模式所产生的有限的沟道迁移率和密度不均匀性的动量弛豫时间的一阶的谐振频率和增益的变化。发现沟道非均匀性（收缩）减弱了不稳定性，与Cheremisin和Samsonidze [Semiconductors 33，578（1999）]的最近结果一致，这可能解释了为什么在真实的HEMT中没有观察到不稳定性。
The arguments leading to the prediction of instability of plasma excitations in a drifting 2D electron gas given by Dyakonov and Shur are made more rigorous by treating a real high-electron mobility transistor (HEMT) channel biased in its ohmic region (i.e., below pinchoff), including nonuniformity of the channel charge density. Expressions are derived for the changes in resonant frequency and gain of the Dyakonov–Shur modes arising from finite channel mobility and density nonuniformity to first order in the momentum relaxation time. It is found that channel nonuniformity (constriction) weakens the instability, in keeping with the recent results of Cheremisin and Samsonidze [Semiconductors 33, 578 (1999)], possibly explaining why it has not been observed in real HEMTs.