Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform
Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform
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DOI：
10.1103/physrevlett.119.176805
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发表时间：
2017-10-26
影响因子：
8.6
通讯作者：
Nichele, F.
中科院分区：
文献类型：
--
作者：
Suominen, H. J.;Kjaergaard, M.;Nichele, F.
我们调查零偏压电导峰，所产生的聚结亚间隙Andreev状态，符合新兴的马约拉纳零模式，在混合超导体超导导线定义在一个二维的InAs/Al异质结构，使用自上而下的光刻和门控。测量表明，硬超导间隙，弹道隧道接触，和面内临界场高达3 T。自顶向下光刻允许复杂的几何形状，分支结构，和简单的缩放多组分器件相比，从组装的纳米线制成的结构。
We investigate zero-bias conductance peaks that arise from coalescing subgap Andreev states, consistent with emerging Majorana zero modes, in hybrid semiconductor-superconductor wires defined in a two-dimensional InAs/Al heterostructure using top-down lithography and gating. The measurements indicate a hard superconducting gap, ballistic tunneling contact, and in-plane critical fields up to 3 T. Top-down lithography allows complex geometries, branched structures, and straightforward scaling to multicomponent devices compared to structures made from assembled nanowires.