Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds
Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds
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DOI：
10.1088/1367-2630/aae93f
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发表时间：
2018-11-07
影响因子：
3.3
通讯作者：
Becher, Christoph
中科院分区：
文献类型：
--
作者：
Lindner, Sarah;Bommer, Alexander;Becher, Christoph
金刚石中的硅空位(SIV)色心是一种固态单光子发射体和自旋量子位，适合作为量子器件的组成部分。在这里，我们证明了纳米金刚石中的SIV中心在室温下呈现出关于零声子线(ZPL)发射的中心波长和线宽的强烈的不均匀分布。我们发现SIV中心分成两组：一组显示出中心波长在730-742 nm的窄范围内，线宽在5-17 nm之间；而第二组包括中心波长在715-835 nm之间的非常宽的分布，但线宽从1到4 nm很窄。在从头算Kohn-Sham密度泛函理论计算的支持下，我们发现第一组的ZPL位移一致地用金刚石晶格中的应变来解释。此外，我们认为，显示中心波长强烈不均匀分布的第二组可能由一类新的与硅相关的缺陷组成。虽然两个团簇的缺陷中心都有单光子发射，但我们发现不同团簇的发射体呈现出不同的光谱特征，如声子边带光谱的变化和不同的闪烁动力学。
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range approximate to 730-742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn-Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.