Highly Conductive Inorganic−Organic Hybrid Langmuir−Blodgett Films Based on MoS2

Highly Conductive Inorganic−Organic Hybrid Langmuir−Blodgett Films Based on MoS2
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基于 MoS2 的高导电无机-有机混合 Langmuir-Blodgett 薄膜

DOI:
10.1021/cm990664b
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发表时间:
2000
影响因子:
8.6
通讯作者:
M. Matsumoto
M. Matsumoto
中科院分区:
材料科学2区
文献类型:
--
作者:
H. Tachibana;Yasushi Yamanaka;H. Sakai;M. Abe;M. Matsumoto

文献摘要

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制备了MoS 2和两亲化合物如烷基卤化铵和烷基胺的高导电性混合朗缪尔-布洛杰特(LB)薄膜。LB膜的层间距取决于有机物种。10层LB膜的横向电导率在101至102 S cm-1的范围内,并随着层间距的增加而降低。102 S cm-1的电导率是迄今为止报道的LB膜的最高值。LB膜的电导率随着层数的增加而增加,当层数足够大时,电导率趋于恒定。的电导率是稳定的,在室温下,即使是单层LB膜和减少了不到一个数量级,在四个月。
Highly conductive hybrid Langmuir−Blodgett (LB) films of MoS2 and amphiphilic compounds such as alkylammonium halides and alkylamines were fabricated. The interlayer spacing of the LB films depended on the organic species. The lateral conductivity of 10-layer LB films was in the range of 101 to 102 S cm-1 and decreased with an increase in interlayer spacing. The conductivity of 102 S cm-1 is the highest value for LB films reported so far. The conductivity of the LB films increased with the layer number and became constant when the layer number was sufficiently large. The conductivity was stable at room temperature even for single-layer LB films and decreased by less than an order of magnitude during four months.