Direct evidence for the site of substitutional carbon impurity in GaAs

Direct evidence for the site of substitutional carbon impurity in GaAs
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GaAs 中替代碳杂质位置的直接证据

DOI：
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发表时间：
1982
期刊：
影响因子：
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通讯作者：
W. Spitzer
W. Spitzer
中科院分区：
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文献类型：
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作者：
W. Theis;K. Bajaj;C. Litton;W. Spitzer

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被引文献

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GaAs中的替代碳主要位于As亚晶格上的直接证据来自碳诱导局域振动模式（LVM）的傅里叶变换红外光谱吸收测量。在高分辨率条件下测量了碳的LVM吸收带，发现它是至少四个吸收带的近叠加。通过与掺硅GaAs的类似测量结果的比较和物理论证，表明唯一令人满意的解释是，这些带来自两种Ga同位素具有不同最近邻构型的As位置上的碳。在Ga亚晶格上没有碳的实验指示。这是第一次观察到这种位移的LVM光谱的简单替代杂质缺陷的半导体。
Direct evidence that substitutional carbon in GaAs is predominantly on the As sublattice is obtained from Fourier transform infrared spectroscopy absorption measurements of the carbon‐induced localized vibrational mode (LVM). The previously reported LVM absorption band of carbon is measured under high resolution conditions and is found to be the near superposition of at least four bands. It is shown by comparison with similar measurements of silicon‐doped GaAs and by physical arguments that the only satisfactory explanation is that the bands arise from carbon on As sites with different nearest‐neighbor configurations of the two Ga isotopes. There is no experimental indication of carbon on the Ga sublattice. These are the first observations of such shifts in LVM spectra for simple substitutional impurity defects in semiconductors.