Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology
Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology
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DOI：
10.1109/ted.2006.876276
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发表时间：
2006-06
影响因子：
3.1
通讯作者：
R. Tadikonda;S. Hardikar;D. Green;M. Sweet;E. Narayanan
中科院分区：
文献类型：
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作者：
R. Tadikonda;S. Hardikar;D. Green;M. Sweet;E. Narayanan
本文简要展示了具有横向掺杂漂移区变化的高压结隔离横向绝缘栅双极晶体管（light）的测量和模拟性能。实验和仿真结果都表明，在不影响正向压降的情况下，该技术可以显著提高击穿电压（bv）和锁存电流密度。结果表明，与采用均匀漂移区技术的传统光源相比，VLD漂移区可以在更小的漂移区长度下实现所需的BV，并且VLD漂移区技术提高了安全工作面积
This brief demonstrates the measured and simulated performance of a high-voltage junction-isolated lateral insulated-gate bipolar transistor (LIGBT) with a variation in lateral doping (VLD) drift region. Both experimental and simulation results show that significant advancements in breakdown voltages (BVs) and latch-up current densities can be obtained using this technology without compromising the forward voltage drop. The results validate that a VLD drift region can achieve the required BV with smaller drift region lengths, in comparison to conventional LIGBTs using uniform drift region technology, and that the VLD drift region technology enhances the safe operating area