Unique Cation Exchange in Nanocrystal Matrix via Surface Vacancy Engineering Overcoming Chemical Kinetic Energy Barriers

Unique Cation Exchange in Nanocrystal Matrix via Surface Vacancy Engineering Overcoming Chemical Kinetic Energy Barriers
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通过表面空位工程克服化学动能障碍,在纳米晶体基质中进行独特的阳离子交换

DOI:
10.1016/j.chempr.2020.08.020
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发表时间:
2020-11-05
期刊:
影响因子:
23.5
通讯作者:
Zhang, Jiatao
Zhang, Jiatao
中科院分区:
化学1区
文献类型:
--
作者:
Bai, Bing;Zhao, Chongyang;Zhang, Jiatao

文献摘要

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表面空位工程在半导体纳米晶体(SNCs)的结构定制和性能改善方面发挥着重要作用。开发可控的空位工程策略来克服多步反应中的动能障碍,有望进一步探索合成机制和功能纳米材料。在此,我们利用一种有效的表面空位工程初始化阳离子交换(SVEICE)策略,前所未有地实现了从三元CulnX(2) (X = S, Se)到Cu, In双掺杂二元CdX或ZnX SNCs的能量不利阳离子交换反应。在多组分SNC表面上顺序和选择性地形成Cu和In空位是突破动能势垒的关键。双掺杂CdS:Cu/In SNCs由于从掺杂In能级到Cu掺杂e-或t能级的辐射跃迁,其发射穿过可见-近红外区,并且该策略还可以定制辐射复合过程。进一步的能量分析和实验证实了它的多功能性。
Surface vacancy engineering played a significant role in tailoring the structure and improving the performance of semiconductor nanocrystals (SNCs). Developing controllable vacancy engineering strategies to overcome kinetic energy barriers in multi-step reactions is anticipated to explore further synthesis mechanisms and functional nanomaterials. Herein, we exploited an effective surface-vacancy-engineering-initialized cation exchange (SVEICE) strategy to realize energy-unfavored cation exchange reactions from ternary CulnX(2) (X = S, Se) to Cu, In dual-doped binary CdX, or ZnX SNCs, unprecedentedly. The sequential and selective creation of Cu and In vacancies on multi-component SNC surface is critical to break through kinetic energy barriers. The emission of dual-doped CdS:Cu/In SNCs crossed visible-NIR region due to the radiative transition from doped In level to Cu-doped e- or t-level, and the radiative recombination process could also be tailored by this strategy. Further energy analysis and experiments confirmed its versatility.