GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
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DOI：
10.1088/1361-6633/aad3e9
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发表时间：
2018-11
影响因子：
18.1
通讯作者：
T. Takeuchi;S. Kamiyama;M. Iwaya;I. Akasaki
中科院分区：
文献类型：
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作者：
T. Takeuchi;S. Kamiyama;M. Iwaya;I. Akasaki
本文介绍了氮化镓基垂直腔面发射激光器（VCSEL）的研究现状和发展前景。这些光电器件发射从紫色到绿色区域的激光，有望成为下一代显示器和照明的上级光源，例如视网膜扫描显示器和自适应头灯。通过与已商业化的砷化镓基红外垂直腔面发射激光器的比较，讨论了其发展现状和前景。
This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg reflectors. These optoelectronic devices, which emit laser light from the violet to green region, are expected to be a superior light source for the next-generation of displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs.