A critical comparative review of PZT and SBT - based science and technology for non-volatile ferroelectric memories
A critical comparative review of PZT and SBT - based science and technology for non-volatile ferroelectric memories
复制标题
基于 PZT 和 SBT 的非易失性铁电存储器科学技术的批判性比较综述
DOI：
10.1080/10584589708015712
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发表时间：
1997
影响因子：
0.7
通讯作者：
O. Auciello
中科院分区：
文献类型：
--
作者：
O. Auciello
摘要对第一代非易失性铁电存储器的两种主要材料技术进行了比较。其中一种是基于Pb（ZrxTi 1-x）O3（PZT）和另一种是基于层状钙钛矿族材料，其中研究最深入的是Sr 1-xBi 2 + yTa 2 O 9（SBT）。基本的科学和技术问题，有关薄膜的合成和成分-微结构-性能的关系，讨论了在材料集成策略，开发生产电容器的商业非易失性铁电存储器的性能。
Abstract A critical comparison is made between the two leading material technologies being developed for the first generation of non-volatile ferroelectric memories. One of them is based on Pb(ZrxTi1-x)O3 (PZT) and the other on a layered perovskite family of materials, of which the most intensively investigated is Sr1-xBi2+yTa2O9 (SBT). Basic scientific and technological issues, related to the synthesis of thin films and composition-microstructure-property relationships, are discussed in view of materials integration strategies developed to produce capacitors with properties suitable for commercial non-volatile ferroelectric memories.