X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C 60 and Si
X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C 60 and Si
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DOI：
10.1088/0256-307x/24/7/065
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发表时间：
2007-07
影响因子：
3.5
通讯作者：
Liu Yan-fang;Liu Jin-feng;Xu Pengshou;Pan Hai-bin
中科院分区：
文献类型：
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作者：
Liu Yan-fang;Liu Jin-feng;Xu Pengshou;Pan Hai-bin
利用x射线光电子能谱和反射高能电子衍射（RHEED）研究了850℃下C60和Si在Si（100）表面沉积形成碳化硅的过程。C - 1s、O - 1s和Si - 2p核能级光谱和RHEED图显示了3C-SiC的形成。
The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C–SiC.