A novel Al-Sc (scandium) alloy for future LSI interconnection

A novel Al-Sc (scandium) alloy for future LSI interconnection
复制标题

用于未来 LSI 互连的新型 Al-Sc（钪）合金

DOI：
10.1109/iedm.1991.235449
复制
发表时间：
1991
期刊：
International Electron Devices Meeting 1991 [Technical Digest]
影响因子：
--
通讯作者：
H. Nishimura
H. Nishimura
中科院分区：
--
文献类型：
--
作者：
S. Ogawa;H. Nishimura

文献摘要

被引文献

相似文献

本文研究了一种新型铝合金Al-Sc（钪），并与传统的Al-Si-Cu合金进行了比较。已经发现，Sc添加到Al中完全抑制了由亚微米线中的应力诱导迁移现象（SM）和小丘生成引起的失效，同时显示出比常规Cu添加更上级的电迁移（EM）性能。新的杂质，Sc，沉淀，并推测作为一个空缺，这是由SM和EM的可靠性退化的起源下沉网站。&lt;<ETX>&gt;
A new aluminum alloy, Al-Sc (scandium), has been studied in comparison with a conventional Al-Si-Cu alloy for future LSI interconnection. It has been found that Sc addition into Al completely suppressed a failure caused by a stress-induced migration phenomenon (SM) in submicron lines and hillock generation, while showing superior electromigration (EM) performance to conventional Cu addition. The new impurity, Sc, precipitates and presumably acts as a sink site for vacancies, which are the origin of the degradation in reliability by SM and EM.<<ETX>>