Thermally stable CGC perpendicular recording media with Pt-rich CoPtCr and thin Pt layers
Thermally stable CGC perpendicular recording media with Pt-rich CoPtCr and thin Pt layers
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具有富 Pt CoPtCr 和薄 Pt 层的热稳定 CGC 垂直记录介质
DOI：
10.1109/tmag.2002.801810
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发表时间：
2002
影响因子：
2.1
通讯作者：
W. Weresin
中科院分区：
文献类型：
--
作者：
Y. Sonobe;H. Muraoka;K. Miura;Y. Nakamura;K. Takano;A. Moser;H. Do;B. Yen;Y. Ikeda;N. Supper;W. Weresin
颗粒/连续(CGC)耦合垂直介质的热稳定性得到了基本模型和实验结果的支持，包括自旋-立式测试。通过在模型中引入层间交换耦合，模拟结果表明CGC结构能够达到1Tbit/in/sup 2/记录密度所需的K/subu/V/k/subB/T的能垒。为了演示CGC方法，我们研究了一类新的CGC垂直介质，它由富铂的CoPtCr层和薄的铂层组成，CoPtCr层具有较差的Co-Cr相偏析。这些层的加入使CoCr/Sub18/Pt/Sub12/介质的成核场从+420提高到-600 Oe，输出的热衰减率从每十年2.23%降低到0.10%。通过使用薄的铂覆盖层，获得了单位正方形，导致了每十年0.21%的小衰减率。与基础颗粒培养基相比，新的CGC培养基信噪比没有下降。与采用多层覆盖结构的CGC介质类似，具有富铂CoPtCr或铂覆盖结构的CGC介质在不影响SNR的情况下提高了热稳定性。这些新的CGC结构的简单性也大大简化了沉积过程。
The thermal stability of coupled granular/continuous (CGC) perpendicular media is supported by fundamental modeling and experimental results, including spin-stand testing. By incorporating the interlayer exchange coupling into the model, the simulation result suggests that the CGC structure is capable of achieving the energy barrier of K/sub u/V/k/sub B/T required for 1 Tbit/in/sup 2/ recording density. To demonstrate the CGC approach, we investigate a new class of CGC perpendicular media consisting of a Pt-rich CoPtCr layer with poor Co-Cr phase segregation and a thin Pt layer. The addition of these layers improves the nucleation field of the CoCr/sub 18/Pt/sub 12/ medium from +420 to -600 Oe and the thermal decay of the output is reduced from 2.23% to 0.10% per decade. Unity squareness was obtained by using a thin Pt capping layer and resulted in a small decay rate of 0.21% per decade. The new CGC media showed no degradation of SNR compared to the base granular medium. Similar to CGC media utilizing a multilayer capping structure, the CGC medium with a Pt-rich CoPtCr or Pt capping structure improved the thermal stability without compromising SNR. The simplicity of these new CGC structures also greatly simplifies the deposition process.