Characterizing Bismuth Doping of Colloidal Germanium Quantum Dots for Energy Conversion Applications
Characterizing Bismuth Doping of Colloidal Germanium Quantum Dots for Energy Conversion Applications
复制标题
用于能量转换应用的胶体锗量子点的铋掺杂表征
DOI：
10.1021/acsanm.0c00709
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发表时间：
2020
影响因子：
5.9
通讯作者：
Bridges, Frank
中科院分区：
文献类型：
--
作者：
Sully, Heather Renee;Tabatabaei, Katayoon;Hellier, Kaitlin;Newton, Kathryn A.;Ju, Zheng;Knudson, Logan;Zargar, Shayan;Wang, Minyuan;Kauzlarich, Susan M.;Bridges, Frank
依赖半导体的众多电子和光电子应用需要通过掺杂来调整其性能。在锗量子点（Ge QDs）中成功掺杂了高达1.5 mol %的铋，这在体锗体系中是无法实现的。用EXAFS对环氧乙胺和十二烷基硫醇包封的Ge量子点结构进行了探测，结果与Bi掺杂占据表面晶格位的结果一致。Bi掺杂量从0.50 mol %增加到1.5 mol %，无序度增加。特别是在Ge量子点中，最近邻的Bi-Ge键长度比Ge - Ge键长度长得多。结果表明，油胺与十二硫醇的配体交换可以部分恢复掺杂量子点的秩序。双掺杂锗量子点薄膜的输运测量表明，双掺杂导致了暗电流和光电流的显著增加。这些结果表明，掺杂可以为改善IV族量子点的性能提供一条途径，用于包括光电二极管和光伏电池在内的能量转换应用。
The numerous electronic and optoelectronic applications that rely on semiconductors require tuning their properties through doping. Germanium quantum dots (Ge QDs) were successfully doped with bismuth up to 1.5 mol %, which is not achievable in the bulk Ge system. The structures of oleylamine- and dodecanethiol-capped Ge QDs were probed with EXAFS, and the results are consistent with Bi dopants occupying surface lattice sites. Increasing the amount of Bi dopant from 0.50 to 1.5 mol % results in increasing disorder. In particular, the nearest-neighbor Bi–Ge bond length is much longer than the Ge–Ge bond length in Ge QDs. Oleylamine to dodecanethiol ligand exchange was shown to partially restore order in doped QDs. Transport measurements of the Bi-doped Ge QD thin films revealed that Bi doping leads to a significant increase in dark current and photocurrent. These results indicate that doping can provide a pathway for improving the performance of group IV quantum dots for energy conversion applications including photodiodes and photovoltaic cells.
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影响因子：
16.6
作者：
Kroupa DM;Vörös M;Brawand NP;McNichols BW;Miller EM;Gu J;Nozik AJ;Sellinger A;Galli G;Beard MC
通讯作者：
Beard MC
影响因子：
8.6
作者：
Katayoon Tabatabaei;A. Holmes;Kathryn A. Newton;E. Muthuswamy;Roy Sfadia;S. Carter;S. Kauzlarich
通讯作者：
Katayoon Tabatabaei;A. Holmes;Kathryn A. Newton;E. Muthuswamy;Roy Sfadia;S. Carter;S. Kauzlarich
通过掺杂胶体纳米粒子烧结制备的锗薄膜的可调电导率
DOI：
10.1021/acs.jpcc.8b10300
发表时间：
2019
期刊：
The Journal of Physical Chemistry C
影响因子：
--
作者：
Meghan McLeod;C. Tabor
通讯作者：
C. Tabor
影响因子：
9.5
作者：
Munro, Andrea M.;Zacher, Brian;Armstrong, Neal R.
通讯作者：
Armstrong, Neal R.
影响因子：
3.7
作者：
Kompch, Alexander;Sahu, Ayaskanta;Winterer, Markus
通讯作者：
Winterer, Markus