Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
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DOI：
10.1016/j.mssp.2016.12.015
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发表时间：
2017-11
影响因子：
4.1
通讯作者：
D. Takeuchi;K. Makihara;A. Ohta;M. Ikeda;S. Miyazaki
中科院分区：
文献类型：
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作者：
D. Takeuchi;K. Makihara;A. Ohta;M. Ikeda;S. Miyazaki
我们制造了嵌入n-Si(100) 结构上的SiO2 中的多重堆叠磷掺杂Si 量子点（P 掺杂Si-QD），并在半透明Au 顶电极施加直流偏压下表征了它们的场电子发射。在施加 -8 V 及以上的偏压时，检测到峰值动能约为 2.0 eV 的电子发射信号。此外，我们还发现，随着施加的直流偏压超过-11 V，电子发射显着增强。发射强度的施加偏压依赖性表明，P掺杂的Si-QDs可以有效提高电子发射效率，而未掺杂的Si-QDs堆栈适合低功率运行。这表明Si-QDs堆叠顶部附近的电场减弱，并且通过磷掺杂增加从n-Si(100)到点的电子注入速率对于Si-QDs堆叠结构的高效电子发射起到了作用。
We have fabricated multiple-stacked phosphorous doped Si quantum dots (P-doped Si-QDs) embedded in SiO2on n-Si(100) structures and characterized their field electron emission under DC bias application to semitransparent Au top-electrodes. At applied biases of −8 V and over, the electron emission signal with a peak kinetic energy at ~2.0 eV was detected. In addition, we also found that the electron emission was drastically enhanced with an increase in the applied DC bias over −11 V. The applied bias dependence of emission intensities shows that the P-doped Si-QDs is effective to improve electron emission efficiency while undoped Si-QDs stack is suited to low power operation. This indicates that electric field was reduced near the top side of the Si-QDs stack and an increase in electron injection rate from the n-Si(100) to the dots by phosphorus doping plays a role on high efficient electron emission from the Si-QDs stacked structures.