Metallic behavior in dilute two-dimensional hole systems.
Metallic behavior in dilute two-dimensional hole systems.
复制标题
稀二维孔系统中的金属行为。
DOI：
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发表时间：
2000
影响因子：
8.6
通讯作者：
David A Ritchie
中科院分区：
文献类型：
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作者：
A. R. Hamilton;A. R. Hamilton;M. Simmons;M. Simmons;M. Pepper;E. H. Linfield;David A Ritchie
我们研究了低密度二维p-GaAs系统中接近表观金属-绝缘体转变的金属行为。关于类金属行为的起源有两个观察结果。在给定的样品内，金属行为的强度几乎与限制电位的不对称性无关，并且主要由低温电阻率（即，k（F）l）。在我们所有的样品中，我们发现，在低密度下，接近从绝缘到金属行为的转变，电导率随着温度的增加而降低，其比例为T/T（F）。
We have studied the metallic behavior in low-density two-dimensional p-GaAs systems, close to the apparent metal-insulator transition. Two observations are made concerning the origins of the metallic-like behavior. Within a given sample the strength of the metallic behavior is almost independent of the asymmetry of the confining potential, and is predominantly determined by the low-temperature resistivity (i.e., by k(F)l). In all our samples we find that at low densities, close to the transition from insulating to metallic behavior, the fractional decrease in conductivity with increasing temperature scales as T/T(F).