Microscopic Theory of Energy Distribution of SiO2/Si Interface Traps: A Survey of History and Some New Results
Microscopic Theory of Energy Distribution of SiO2/Si Interface Traps: A Survey of History and Some New Results
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DOI：
10.1109/icsict.2006.306101
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发表时间：
2006-10
期刊：
影响因子：
--
通讯作者：
Zuhui Chen;B. Jie;C. Sah
中科院分区：
文献类型：
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作者：
Zuhui Chen;B. Jie;C. Sah
Slater的固体中大量供体和受体杂质离子束缚电子态的三维局域摄动理论，由Sah扩展，预测了由于Si:Si和Si:O键角和长度的随机变化，来自中性电子和空穴界面陷阱的束缚电子态的u形能量分布。界面陷阱处电子跃迁的能量耗散预示着电子捕获到中性电子陷阱的速率在接近导带边缘的电子陷阱能级中较大，同样，空穴捕获到中性电子陷阱的速率在接近价带边缘的空穴陷阱能级中较大。描述了u形电子态密度的历史搜索，微扰理论，以及界面陷阱对电子-空穴复合电流的电流-电压线形的影响
Slater's 3-dimensional localized perturbation theory for bound electronic states at bulk donor and acceptor impurity ions in solids, as extended by Sah, anticipates U-shaped energy distributions of bound electronic states from neutral electron and hole interface traps due to random variations of the Si:Si and Si:O bond angle and length. Energy dissipation of electronic transitions at the interface traps anticipates the rate of electron capture into neutral electron trap larger for electron trap energy levels nearer the conduction band edge, and similarly, the rate of hole capture into neutral hole trap larger for hole trap energy levels nearer the valence band edge. Historical searches of U-shaped density of electronic states, the perturbation theory, and the effects on the current versus voltage lineshape of electron-hole recombination current from interface traps are described