Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films
Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films
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DOI：
10.1016/j.tsf.2004.06.159
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发表时间：
2005-02-01
期刊：
影响因子：
2.1
通讯作者：
Shao, JA
中科院分区：
文献类型：
--
作者：
Hong, RJ;Qi, HJ;Shao, JA
研究了氧分压对ZnO薄膜结构和光致发光的影响。采用直流反应磁控溅射法在室温下制备了不同氧浓度的薄膜。随着氧含量的增加，薄膜的结构由Zn和ZnO单相向（002）取向转变，薄膜的机械应力由拉应力转变为压应力。氧分压越高，薄膜的发光强度越弱，这可能是由于薄膜中的氧空位和锌空位减少所致。这表明ZnO薄膜中的发光来源于氧空位和锌晶格相关的缺陷。从ZnO薄膜的光学透射光谱，等离子体的边缘移向更短的波长与膜的化学计量比的改善。(C)2004 Elsevier B.V.保留所有权利。
The effects of oxygen partial pressure on the structure and photoluminescence (PL) of ZnO films were studied. The films were prepared by direct current (DC) reactive magnetron sputtering with various oxygen concentrations at room temperature. With increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase ZnO, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. Films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. This indicates that the emission in ZnO film originates from the oxygen vacancy and zinc interstitial-related defects. From optical transmittance spectra of ZnO films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (C) 2004 Elsevier B.V. All rights reserved.