Structure and electrical conductivity of ultrathin Ni-Cu films
Structure and electrical conductivity of ultrathin Ni-Cu films
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超薄Ni-Cu薄膜的结构和电导率
DOI：
10.1134/s106377610611015x
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发表时间：
2006
影响因子：
1.1
通讯作者：
S. Khursenko
中科院分区：
文献类型：
--
作者：
V. Loboda;S. Khursenko
研究了厚度为d=1−10 nm、铜含量为10-95at%的镍铜合金超薄膜的结构、物相组成、形貌和电导率。结果表明，所有薄膜均为面心立方结构的Ni-Cu合金，其岛状结构在沉积时为1.5-2 nm，在700K时为约20 nm，薄膜的导电性取决于薄膜的厚度和形貌。对于d≈为1 nm的薄膜，其电导率被热激活，激活能为Ea≈0.086−0.095 eV。D>；3 nm薄膜的电导率与金属温度有关，具有正的电阻率温度系数。
The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1−10 nm and a Cu concentration of 10–95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5–2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d ≈ 1 nm, the electrical conductivity is thermally activated with an activation energy Ea ≈ 0.086−0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.