Narrow Gap Semiconductors 2007
Narrow Gap Semiconductors 2007
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窄带隙半导体 2007
DOI：
10.1007/978-1-4020-8425-6_26
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Lobaskin D
中科院分区：
文献类型：
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作者：
Lobaskin D
我们给出了在库仑相互作用下单壁碳纳米管的三阶非线性光磁化率的详细评价。结果表明，为了得到低于带隙频率的正确结果，带间跃迁和带内跃迁都应包括在计算中。在人为“关闭”库仑相互作用的情况下，得到的结果与前人对非相互作用电子的三阶磁化率的研究结果一致。我们证明了库仑相互作用显著地改变了纳米管的非线性光学特性：共振峰向更高的能量移动，共振振幅显著增加。
We present a detailed evaluation of the third order nonlinear optical susceptibility of single wall carbon nanotubes in the presence of Coulomb interaction. It is demonstrated that both the inter- and intraband transitions should be included in calculations in order to obtain the correct results for frequencies below the bandgap. For the case when the Coulomb interaction is artificially “switched off”, the obtained results are consistent with previous study of third-order susceptibility for the non-interacting electrons. We demonstrate that Coulomb interaction significantly modifies the non-linear optical properties of the nanotubes: the resonance peaks are shifted to higher energies and the amplitudes of the resonances are noticeably increased.