The structure and redox properties of vanadium oxide surface compounds

The structure and redox properties of vanadium oxide surface compounds
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DOI:
10.1016/0021-9517(86)90140-5
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发表时间:
1986-11
影响因子:
7.3
通讯作者:
J. Haber;A. Kozłowska;R. Kozłowski
J. Haber;A. Kozłowska;R. Kozłowski
中科院分区:
化学1区
文献类型:
--
作者:
J. Haber;A. Kozłowska;R. Kozłowski

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用结构模型考察和讨论了负载在二氧化钛、氧化铝和二氧化硅上的V-O层的氧化还原性质。在此基础上,提出了单分散的VO4单元分布在锐钛矿型二氧化钛的(001)面上,它位于阳离子中心,有两个末端氧和两个桥氧,其中一个氧在还原过程中被除去。在γ-Al_2O_3上主要形成了二聚体、焦钒酸类物种,而在SiO_2上观察到了结晶较差的V2O5颗粒。钒-氧物种的结构决定了每个V原子可以去除的氧的数量。
The redox properties of VO layers supported on TiO2, A12O3, and SiO2have been examined and discussed in terms of structural models. On this basis monodispersed VO4units are postulated on the (001) plane of anatase (TiO2), located at the cationic sites with two terminal and two bridging oxygens, one of the latter being removed on reduction. Dimeric, pyrovanadate-type species seem to be predominantly formed on γ-Al2O3, whereas grains of poorly crystalline V2O5are observed on SiO2. The structure of the vanadium-oxygen species determines the number of oxygens which can be removed per V atom.