Excitons in electrostatic traps
Excitons in electrostatic traps
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DOI：
10.1063/1.2181276
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发表时间：
2006-03-15
影响因子：
3.2
通讯作者：
Gossard, AC
中科院分区：
文献类型：
--
作者：
Hammack, AT;Gippius, NA;Gossard, AC
我们考虑耦合量子阱中间接激子的面内静电陷阱，其中陷阱是由横向调制的栅极电压形成的。静电陷阱中激子限制的一个内在障碍是可能导致激子解离的面内电场。我们提出了一种抑制面内电场的设计，同时有效地将激子限制在静电陷阱中。我们提出了各类静电陷阱的计算以及静电陷阱中间接激子捕获原理的实验证明。 (c) 2006 年美国物理研究所。
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps. (c) 2006 American Institute of Physics.