50 nm Hall sensors for room temperature scanning Hall probe microscopy
50 nm Hall sensors for room temperature scanning Hall probe microscopy
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DOI：
10.1143/jjap.43.777
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发表时间：
2004-02-01
期刊：
影响因子：
--
通讯作者：
Oral, A
中科院分区：
文献类型：
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作者：
Sandhu, A;Kurosawa, K;Oral, A
采用光学光刻和聚焦离子束铣削相结合的方式制造了尺寸类似于 50 nm x 50 nm 的铋纳米霍尔传感器。传感器的霍尔系数、串联电阻和最佳磁场灵敏度分别为4 x 10(-4) Omega/G 9.1 kOmega 和0.8 G/ rootHz。将50 nm纳米Bi霍尔传感器安装到室温扫描霍尔探针显微镜中，并成功用于低矫顽力石榴石薄膜的铁磁域直接成像。
Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.