Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy
Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy
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DOI：
10.1088/0957-4484/23/17/175701
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发表时间：
2012-05
期刊：
影响因子：
3.5
通讯作者：
A. Schramm;J. Tommila;C. Strelow;T. Hakkarainen;A. Tukiainen;M. Dumitrescu;A. Mews;T. Kipp;M. Guina
中科院分区：
文献类型：
--
作者：
A. Schramm;J. Tommila;C. Strelow;T. Hakkarainen;A. Tukiainen;M. Dumitrescu;A. Mews;T. Kipp;M. Guina
我们提出了一个单一的，网站控制的砷化铟量子点的GaAs模板上使用紫外纳米压印光刻和分子束外延生长。实现了周期为1.5 µ m的大量子点阵列。通过稳态和时间分辨的显微光致发光实验对单量子点进行了研究。我们获得了线宽为45 µ eV的单激子发射。在时间分辨实验中，我们观察到的衰变时间约为670 ps。我们的研究结果强调了纳米压印光刻和分子束外延的潜力，以创建大规模的，单量子点阵列。
We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 µm was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 µeV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays.