A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier
A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier
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DOI：
10.1109/tmtt.2008.2004897
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发表时间：
2008-11-01
影响因子：
4.3
通讯作者：
Piazzon, Luca
中科院分区：
文献类型：
--
作者：
Colantonio, Paolo;Giannini, Franco;Piazzon, Luca
提出了一种新的双频高效率谐波调谐功率放大器的设计方法。所提出的方法是基于开发的方法来设计多频无源匹配网络，它允许并发操作。网络设计准则进行了大量的研究，后来从理论和实践的角度进行了推广。最后介绍了一个并行双频高效率HT PA的设计、实现和完整的特性。一个1毫米的栅极外围GaN HEMT器件用于设计和实现的PA同时工作在2.45和3.3 GHz。测量结果表明，如果在连续波单模工作，在两个目标频带中，在33和32.5 dBm输出功率下的漏极效率分别为53%和46%。在并发模式下，35%的平均效率实现了两个同时应用的正交频分复用信号。
In this paper, a novel technique to design concurrent dual-band high-efficiency harmonic tuned (HT) power amplifiers (PAs) is presented. The proposed approach is based on a methodology developed to design multifrequency passive matching networks, which allows concurrent operability. The network design criterion is heavily investigated and later generalized both from the theoretical and practical point of view. The design, realization, and the complete characterization of a concurrent dual-band high-efficiency HT PA is finally described. A 1-mm gate periphery GaN HEMT device was used for the design and realization of the PA operating concurrently at 2.45 and 3.3 GHz. The measurement results have shown 53% and 46% drain efficiency at 33- and 32.5-dBm output power in the two targeted bands if operated in continuous wave single mode. In concurrent mode, 35% average efficiency was achieved with two simultaneously applied orthogonal frequency-division multiplexing signals.