Recombination and resistive losses at ZnO /a-Si:H/c-Si interfaces in heterojunction back contacts for Si solar cells
Recombination and resistive losses at ZnO /a-Si:H/c-Si interfaces in heterojunction back contacts for Si solar cells
复制标题
硅太阳能电池异质结背接触中 ZnO /a-Si:H/c-Si 界面的复合和电阻损耗
DOI：
10.1063/1.2803749
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发表时间：
2007
影响因子：
3.2
通讯作者：
U. Rau
中科院分区：
文献类型：
--
作者：
F. Einsele;P. Rostan;M. Schubert;U. Rau
研究了高效硅太阳电池p型晶体硅闪烁氢钝化Si：H闪烁ZnO：Al异质结背接触的电阻损失。对于结的（p型）Si：H结（n型）ZnO部分的低隧穿电阻要求以高氢稀释率RH>40沉积Si：H，从而产生高掺杂微晶（μc）Si：H层。这种μ c-Si：H层如果直接沉积在Si晶片上，则产生S/180 cm scins的表面复合速度。在太阳能电池中使用相同的层作为（p型）c-Si scinSi：H scinZnO：Al背接触的一部分导致开路电压VOC= 640 mV和填充因子FF= 80%。在μ c-Si：H和晶片之间插入未掺杂的非晶（i）a-Si：H层导致S的进一步降低，并且对于太阳能电池，导致VOC的增加。然而，如果该本征层的厚度超过4- 5 nm的阈值，则电阻损耗使太阳能电池的填充因子FF劣化。接触电阻随温度变化的测量
We investigate resistive losses at p-type crystalline Si∕hydrogen passivated Si:H∕ZnO:Al heterojunction back contacts for high efficiency silicon solar cells. A low tunneling resistance for the (p-type) Si:H∕(n-type) ZnO part of the junction requires deposition of Si:H with a high hydrogen dilution rate RH>40 resulting in a highly doped microcrystalline (μc) Si:H layer. Such a μc‐Si:H layer if deposited directly on a Si wafer yields a surface recombination velocity of S≈180cm∕s. Using the same layer as part of a (p-type) c‐Si∕Si:H∕ZnO:Al back contact in a solar cell results in an open circuit voltage VOC=640mV and a fill factor FF=80%. Insertion of an undoped amorphous (i) a‐Si:H layer between the μc‐Si:H and the wafer leads to a further decrease of S and, for the solar cells, to an increase of VOC. However, if the thickness of this intrinsic layer exceeds a threshold value of 4–5nm, resistive losses degrade the fill factor FF of the solar cells. Temperature dependent measurements of the contact resistanc...