Growth and vacuum post-annealing effect on the properties of the new absorber CuSbS2 thin films
Growth and vacuum post-annealing effect on the properties of the new absorber CuSbS2 thin films
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DOI：
10.1016/j.matlet.2008.04.003
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发表时间：
2008-07
影响因子：
3
通讯作者：
A. Rabhi;M. Kanzari;B. Rezig
中科院分区：
文献类型：
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作者：
A. Rabhi;M. Kanzari;B. Rezig
采用单源热蒸发法在玻璃衬底上制备了CuSbS 2薄膜，并对其进行了真空后处理。在130-200 °C的温度范围内，在真空气氛中对膜退火2小时。研究了热处理对薄膜结构、光学和电学性能的影响。X射线衍射（XRD）结果表明，薄膜在低于200 °C的退火温度下为非晶结构，而在低于200 ° C的退火温度下为CuSbS 2主相的多晶结构。在低于200 °C的温度下退火的薄膜，在1.8-2 eV范围内出现一个直接光学跃迁，在200 °C退火的薄膜，在1.3和1.79eV处出现两个光学直接跃迁，分别对应于CuSbS 2和Sb 2S 3的值。电学测量显示，在低于200 °C的温度下退火的样品的低电阻率（3.10−2-9.10−2）Ω cm转化为在200 ° C下退火的样品的相对高电阻率（2 Ω cm）。在所有情况下，样品均表现出p-Z型导电性。
Post-growth treatments in vacuum atmosphere were performed on CuSbS2films prepared by the single-source thermal evaporation method on glass substrates. The films were annealed in vacuum atmosphere for 2 h in temperature range 130–200 °C. The effect of this thermal treatment on the structural, optical and electrical properties of the films was studied. X-ray diffraction (XRD) patterns indicated that the films exhibited an amorphous structure for annealing temperature below 200 °C and a polycrystalline structure with CuSbS2principal phase. For the films annealed at temperatures below 200 °C one direct optical transition in range 1.8–2 eV was found. For the films annealed at 200 °C, two optical direct transitions emerged at 1.3 and 1.79 eV corresponding to the CuSbS2and Sb2S3values respectively. The electrical measurements showed a conversion from low resistivities (3.10−2–9.10−2) Ω cm for the samples annealed at temperatures below 200 °C to relatively high resistivities (2 Ω cm) for the samples annealed at 200 °C. In all cases the samples exhibited p-Ztype conductivity.