Fabrication of V-substituted (Bi, M)4Ti3O12 [M = lanthanoids] thin films by chemical solution deposition method
Fabrication of V-substituted (Bi, M)4Ti3O12 [M = lanthanoids] thin films by chemical solution deposition method
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采用化学溶液沉积法制备 V 取代 (Bi, M)4Ti3O12 [M = 镧系元素] 薄膜
DOI：
10.1557/proc-688-c2.3.1
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
H. Funakubo
中科院分区：
文献类型：
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作者：
H. Uchida;H. Yoshikawa;I. Okada;H. Matsuda;T. Iijima;T. Watanabe;H. Funakubo
从“位点工程”的角度提出了钛酸铋（bi4ti3o12； BIT）基铁电材料，其中Bi-位离子被类镧离子（la3 +和nd3 +）取代，Ti-位离子被其他具有更高电荷价的离子（v5 +）取代。本文研究了钒(V) -取代（Bi，M） 4 ti3o12薄膜[M =镧系]对铁电性能的影响。采用化学溶液沉积（CSD）技术在（111）Pt/Ti/ sio2 /(100)Si衬底上制备了v取代（Bi，M） 4ti3o12薄膜。通过v -取代，（Bi,La） 4ti3o12和（Bi,Nd） 4ti3o12薄膜的残余极化得到了改善。v -取代还可以降低BLT和BNT薄膜的加工温度。
Bismuth titanate (Bi 4 Ti 3 O 12 ; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La 3+ and Nd 3+ ) and Ti-site ions by other ions with higher charge valence (V 5+ ). In the present study, influences of vanadium (V) - substitution for (Bi,M) 4 Ti 3 O 12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M) 4 Ti 3 O 12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO 2 /(100)Si substrate. Remnant polarization of (Bi,La) 4 Ti 3 O 12 and (Bi,Nd) 4 Ti 3 O 12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.