An optically differential reconfigurable gate array using a 0.18 /spl mu/m CMOS process

An optically differential reconfigurable gate array using a 0.18 /spl mu/m CMOS process
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使用 0.18 /spl mu/m CMOS 工艺的光学差分可重构门阵列

DOI:
10.1109/socc.2004.1362436
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发表时间:
2004
期刊:
IEEE International SOC Conference, 2004. Proceedings.
影响因子:
--
通讯作者:
F. Kobayashi
F. Kobayashi
中科院分区:
--
文献类型:
--
作者:
Minoru Watanabe;F. Kobayashi

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本文采用0.18/spl mu/m-5金属CMOS工艺技术设计了高密度光差分可重构门阵列(ODRGA)。ODRGA是一种现场可编程门阵列(fpga)。然而,与传统的fpga不同,ODRGAs使用外部光学系统进行光学重新配置。虽然ODRGAs已经使用0.35/spl mu/m-3金属CMOS工艺技术制造,但其栅极密度仍然令人不满意。因此,采用更先进的工艺技术,在7.82mm/sup 2/芯片上制造了具有四个逻辑块,五个开关矩阵和16个I/O位的新型ODRGA-VLSI芯片。本文详细设计了一种预制的ODRGA-VLSI芯片、光学重构电路、门阵列结构、CAD布局以及安装在估计板上的ODRGA-VLSI芯片。本研究还包括重构周期的实验结果。
This paper presents the design of a high-density optically differential reconfigurable gate array (ODRGA) using a 0.18/spl mu/m-5 metal CMOS process technology. ODRGA is a type of field programmable gate arrays (FPGAs). However, unlike conventional FPGAs, ODRGAs are reconfigured optically using an external optical system. Although ODRGAs have already been fabricated using a 0.35/spl mu/m-3 metal CMOS process technology, their gate-density remains unsatisfactory. For that reason, a new ODRGA-VLSI chip with four logic blocks, five switching matrices, and 16 I/O bits was fabricated on a 7.82mm/sup 2/ chip using more advanced process technology. This paper presents the detailed design of a fabricated ODRGA-VLSI chip, the optical reconfiguration circuit, the gate array structure, the CAD layout, and an ODRGA-VLSI chip mounted on an estimation board. This study also includes experimental results regarding the reconfiguration period.
DOI: --
发表时间: 2005
期刊: IEEE International parallel & Distributed Processing Symposium CD-ROM
影响因子: --
作者:
M.Watanabe;F.Kobayashi
通讯作者: F.Kobayashi