Understanding the Growth Dynamics Cs-Sb Thin Films via In-Situ Characterization Techniques: Towards Epitaxial Alkali Antimonide Photocathodes
Understanding the Growth Dynamics Cs-Sb Thin Films via In-Situ Characterization Techniques: Towards Epitaxial Alkali Antimonide Photocathodes
复制标题
通过原位表征技术了解 Cs-Sb 薄膜的生长动态:外延碱锑化物光电阴极
DOI:
--
复制
发表时间:
2021
期刊:
影响因子:
--
通讯作者:
K. Shen
中科院分区:
文献类型:
--
作者:
A. Galdi;J. Balajka;I. Bazarov;L. Cultrera;W. DeBenedetti;M. Hines;Cheng Hu;J. Maxson;L. Moreschini;H. Paik;C. Parzyck;K. Shen
Alkali antimonide photocathodes, such as Cs3Sb, have attractive properties, such as low emittance and high quantum efficiency, which makes them excellent candidates for next-generation high-brightness electron sources. A large number of studies in literature focus on quantum efficiency and lifetime, and fewer report chemical and structural analysis, despite the latter ultimately determine the brightness at the photocathode. Epitaxial, single-crystalline films would allow to study the intrinsic properties of alkali antimonide photocathodes and to optimize them for maximum brightness, but this goal remains elusive. A strong limiting factor is the extreme air sensitivity, preventing ex-situ structural and chemical analysis. We used vacuum suitcase transfer to study the morphology of Cs3Sb samples grown on different substrates with scanning tunneling microscopy. Samples grown on SiC substrates show 10 times larger islands than samples grown on other substrates in the same conditions. Further studies with in situ reflection high energy electron diffraction demonstrate favorable growth dynamics on SiC, making it a preferable substrate for epitaxial growth of Cs3Sb.