Nanostructured SnSe: Synthesis, doping, and thermoelectric properties
Nanostructured SnSe: Synthesis, doping, and thermoelectric properties
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纳米结构 SnSe：合成、掺杂和热电性能
DOI：
10.1063/1.5018860
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发表时间：
2018-03-21
影响因子：
3.2
通讯作者：
Gao, Xuan P. A.
中科院分区：
文献类型：
--
作者：
Liu, Shuhao;Sun, Naikun;Gao, Xuan P. A.
IV-VI单硫属化物SnSe或SnS最近被提议作为一种有前途的二维（2D）材料用于谷电子学和热电学。我们报道了化学气相沉积法合成 SnSe 纳米片和纳米结构薄膜及其热电性能。发现生长的 SnSe 纳米结构本质上是 p 型的，并且制造了单个 SnSe 纳米片场效应晶体管。通过Ag掺杂，SnSe纳米结构薄膜的功率因数与生长材料的“本征”相比可提高一个数量级。我们的工作为追求 IV-VI 单硫属化物作为电子和热电的新型二维半导体迈出了第一步。
IV-VI monochalcogenide SnSe or SnS has recently been proposed as a promising two-dimensional (2D) material for valleytronics and thermoelectrics. We report the synthesis of SnSe nanoflakes and nanostructured thin films with chemical vapor deposition method and their thermoelectric properties. As grown SnSe nanostructures are found to be intrinsically p-type and the single SnSe nanoflake field effect transistor was fabricated. By Ag doping, the power factor of SnSe nanostructured thin films can be improved by up to one order of magnitude compared to the “intrinsic” as grown materials. Our work provides an initial step in the pursuit of IV-VI monochalcogenides as novel 2D semiconductors for electronics and thermoelectrics.