Laser spectroscopy of individual quantum dots charged with a single hole
Laser spectroscopy of individual quantum dots charged with a single hole
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DOI：
10.1063/1.3665951
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发表时间：
2011-12-12
影响因子：
4
通讯作者：
Warburton, R. J.
中科院分区：
文献类型：
--
作者：
Gerardot, B. D.;Barbour, R. J.;Warburton, R. J.
我们用共振激光光谱法研究了单个InGaAs量子点中带正电荷的激子（X1+）。比较了具有不同掺杂剂种类（Be或C作为受体，Si作为供体）的三个样品。p掺杂样品表现出比n掺杂样品更大的非均匀加宽（x3）和更小的吸收对比度（x10）。对于X ~（1+）离子，观察到了点依赖的非线性Fano效应，表明了与简并连续态的耦合。然而，对于C-掺杂的样品，X1+的线形和饱和展宽遵循孤立的原子跃迁行为。这种掺杂C的器件结构对于单空穴自旋初始化、操纵和测量是有用的。(C)2011年美国物理学会。[doi：10.1063/1.3665951]
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample, the X1+ lineshape and saturation broadening follows isolated atomic transition behaviour. This C-doped device structure is useful for single hole spin initialization, manipulation, and measurement. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665951]