Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer
Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer
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DOI：
10.1016/j.apsusc.2010.04.097
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发表时间：
2010-09
影响因子：
6.7
通讯作者：
T. Chiu;K. Tonooka;N. Kikuchi
中科院分区：
文献类型：
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作者：
T. Chiu;K. Tonooka;N. Kikuchi
以金属钒为靶材，采用脉冲激光沉积法在玻璃衬底上生长vo2薄膜。本研究采用ZnO薄膜作为缓冲层，在玻璃衬底上生长vo2薄膜。x射线衍射研究表明，vo2薄膜在c轴取向的ZnO缓冲层上具有b轴优先取向。通过优化ZnO缓冲层的厚度和vo2沉积过程中的氧气压力，可以生长出高b轴取向的vo2薄膜。从红外反射率和电阻的角度考察了vo2薄膜样品在不同温度下的金属-绝缘体转变特性。
VO2thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO2thin films on glass substrates. X-ray diffraction studies showed that the VO2thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO2deposition were optimized to grow highly b-axis oriented VO2thin films. The metal-insulator transition properties of the VO2film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.