Electron transport in the barriers of AlGaAs/GaAs quantum well structures observed by scanning-tunneling-microscope light-emission spectroscopy
Electron transport in the barriers of AlGaAs/GaAs quantum well structures observed by scanning-tunneling-microscope light-emission spectroscopy
复制标题
扫描隧道显微镜发光光谱观察 AlGaAs/GaAs 量子阱结构势垒中的电子传输
DOI：
10.1063/1.1480467
复制
发表时间：
2002
影响因子：
4
通讯作者：
S. Ushioda
中科院分区：
文献类型：
--
作者：
T. Tsuruoka;R. Tanimoto;Y. Ohizumi;R. Arafune;S. Ushioda
利用扫描隧道显微镜光发射（STM-LE）谱研究了p-Al 0. 3Ga 0.7As/p-GaAs量子阱（QW）结构中少数载流子的输运特性。在室温下在解理（110）表面上进行光学测量。STM-LE谱是通过从位于离量子阱不同距离处的STM针尖注入热电子来测量的。从个别威尔斯的发射强度作为一个函数的尖端-井距离被发现衰减有两个不同的衰减常数。
Using scanning-tunneling-microscope light-emission (STM-LE) spectroscopy, we have investigated the transport properties of minority carriers in p-Al0.3Ga0.7As/p-GaAs quantum well (QW) structures. The optical measurements were performed on a cleaved (110) surface at room temperature. The STM-LE spectra were measured by injecting hot electrons from the STM tip positioned at different distances from the QWs. The emission intensity from individual wells as a function of the tip-well distance was found to decay with two distinct decay constants.