Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model
Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model
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DOI：
10.1109/16.944211
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发表时间：
2001-09
影响因子：
3.1
通讯作者：
A. Strollo;E. Napoli
中科院分区：
文献类型：
--
作者：
A. Strollo;E. Napoli
提出了一种用于计算新近提出的功率超结器件击穿电压的二维解析模型。该模型能够准确地估计电场和击穿电压，为SJ结构的设计提供了深入的依据。讨论了在给定击穿电压下最小化导通电阻的设计准则。二维数值模拟验证了所提模型的有效性。
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power super-junction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.