Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology
Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology
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硅多结太阳能电池上 III-V 族硅子电池的优化：与传统硅技术的主要区别
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发表时间：
2012
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通讯作者：
I. Rey‐Stolle
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作者：
E. García;D. Martín;I. García;J. Lelievre;I. Rey‐Stolle
由 GaAsP 或 GaInP 顶部电池和硅 (Si) 底部电池形成的双结太阳能电池似乎是实现光伏 (PV) 应用中长期以来寻求的 III-V 材料在 Si 上集成的有吸引力的候选者。这种集成将为光伏技术带来成本突破，将硅的低成本和 III-V 多结太阳能电池的效率潜力结合起来。平板光伏技术中硅太阳能电池性能的优化是众所周知的；然而，事实证明，在 MOVPE 反应器中处理时，硅衬底的行为是不同的。在这项研究中，我们分析了影响底部子电池性能的几个因素，即 1) 由于磷扩散而形成发射极； 2）GaP成核层提供的钝化质量； 3) 工艺对底部子电池光伏性能的影响。
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.