Spatially resolved photoluminescence in GaAs surface acoustic wave structures
Spatially resolved photoluminescence in GaAs surface acoustic wave structures
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DOI：
10.1063/1.121288
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发表时间：
1998-06
影响因子：
4
通讯作者：
P. Santos;M. Ramsteiner;F. Jungnickel
中科院分区：
文献类型：
--
作者：
P. Santos;M. Ramsteiner;F. Jungnickel
研究了GaAs声表面波结构中声表面波与激子光致发光的相互作用。PL对SAW振幅和照明强度的依赖性可以通过基于激子的场致电离和光生载流子对SAW电场的屏蔽的简单模型来解释。微观PL构成了一个强大的技术，用于空间分辨SAW结构中的电场分布。
The interaction between a surface acoustic wave (SAW) and the excitonic photoluminescence (PL) in GaAs SAW structures is investigated. The dependence of the PL on the SAW amplitude and illumination intensity is explained by a simple model based on the field-induced ionization of the excitons and on the screening of the SAW electric field by photogenerated carriers. Microscopic PL constitutes a powerful technique for spatially resolving electric-field distributions in SAW structures.